Three-Dimensional Atom-Probe Tomographic Studies of Nickel Monosilicide/Silicon Interfaces on a Subnanometer Scale
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چکیده
Three-dimensional atom-probe tomography was utilized to study the distribution of M (M = Pt or Pd) after silicidation of a solidsolution Ni0.95M0.05 thin-film on Si(100). Both Pt and Pd segregate at the (Ni1-xMx)Si/Si(100) heterophase interface and may be responsible for the increased resistance of (Ni1-xMx)Si to agglomeration at elevated temperatures. Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison regime-B, is found after silicidation to form (Ni0.99Pt0.01)Si. This underscores the importance of interfacial phenomena in stabilizing this lowresistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi as determined by Kelvin probe force-microscopy. The nickel monosilicide/Si heterophase interface is reconstructed in three-dimensions and its chemical roughness is evaluated.
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تاریخ انتشار 2009